Monte-Carlo Simulations of Electron Channelling a Bent (110) Channel in Silicon. (arXiv:1104.3890v1 [physics.acc-ph])

Results obtained with the a new Monte-Carlo code for the channelling of 855
MeV electrons along the crystallographic plane (110) in a bent Silicon crystal
are presented. The definitions of the dechannelling length and the asymptotic
acceptance of the channel are given in a form that is suitable for the
Monte-Carlo procedure. The dependence of these quantities on the crystal
bending is studied.

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